Multiple-gate MOSFET device with lithography independent silicon body thickness and methods for fabricating the same

ABSTRACT

Multi-gate MOS transistors and fabrication methods are described, in which the transistor semiconductor body thickness or width is lithography independent, allowing scaled triple and quad-gate devices having semiconductor bodies smaller than a lateral gate length dimension. A form structure is provided over a semiconductor wafer starting structure, and spacers are formed along one or more sidewalls of an opening in the form structure. A semiconductor material is deposited in the opening by epitaxial growth or other deposition process, and the form structure and the spacer are removed. A gate structure is then formed along the top and sides of a central portion of the formed semiconductor body. The spacer may be L-shaped, providing an undercut or recess at the bottom of the semiconductor body sidewall, and the gate may be formed in the undercut area to allow fabrication of more than three gates.

RELATED APPLICATIONS

This application is related to U.S. patent application Ser. No. ______(Attorney Docket No. TI-36031), filed on ______, entitled TRIPLE GATEMOSFET TRANSISTOR AND METHODS FOR FABRICATING THE SAME.

FIELD OF INVENTION

The present invention relates generally to semiconductor devices andmore particularly to multiple-gate MOSFET transistors with lithographyindependent silicon body thickness and fabrication methods therefor.

BACKGROUND OF THE INVENTION

Metal-oxide-semiconductor field-effect transistors (MOSFETs) are widelyused in the electronics industry for switching, amplification,filtering, and other tasks related to both analog and digital electricalsignals. Conventional planar MOS transistors include a gate dielectricoverlying a channel region at the upper surface of a silicon substrateand a gate electrode situated above the gate dielectric. Source anddrain regions are formed in the substrate on either lateral side of thechannel. In operation, the gate electrode is energized to create anelectric field in the channel region of the substrate, thus inverting athin portion of the channel conductive underneath the gate dielectricand allowing minority carriers to travel through the channel between thesource/drains. The threshold voltage (Vt) of a transistor is the gatevoltage value required to render the channel conductive by formation ofan inversion layer (e.g., in which the concentration of minoritycarriers exceeds that of majority carriers) at the surface of thesemiconductor channel under the gate.

Scaling is a continuing process in the manufacture and design ofsemiconductor products, wherein electrical device feature sizes arebeing reduced to increase device density, improve performance (e.g.,increase switching speed), and to reduce power consumption. Forinstance, it is desirable to scale or reduce the length of thetransistor gate and hence the length of the channel between thesource/drains, to increase drive current performance, particularly foroperation with reduced gate voltages. The length of the gate structureis typically the smallest dimension in a planar transistor. However,lithography generally limits the extent to which transistor dimensionscan be reliably scaled, wherein the minimum gate length is typicallylimited to the smallest dimension that can be reliably and repeatablypatterned and etched using current photolithographic and etchingtechniques.

In addition to fabrication process limitations, performance limitationsare also a barrier to scaling conventional planar transistor dimensions,particularly the gate length. For example, as the gate length isreduced, the transistor performance may be inhibited by short channeleffects. In devices having long channel lengths, the gate voltage andthe resulting field primarily control the depletion of charge under thegate. In shorter channel devices, however, the channel region is alsoaffected by the source and drain voltages, leading to increasedoff-state current due to Vt roll off, degraded subthreshold slope, anddegraded output current. In addition, since less gate voltage is neededto deplete the shortened channel, the barrier for electron injectionfrom the source to the drain decreases, a situation sometimes referredto as drain induced barrier lowering (DIBL).

As the performance and process limitations on scaling planar transistorsare reached, attention has been recently directed to transistor designshaving multiple gates (e.g., non-planar MOS transistors). In theory,these designs provide more control over a scaled channel by situatingthe gate around two or more sides of the channel silicon, wherein ashorter channel length can be achieved for the same gate dielectricthickness or similar channel lengths can be used with thicker gatedielectrics. FIGS. 10A and 10B illustrate examples of some multiple-gatetransistor designs, including dual and triple-gate transistors 60 and62, respectively in FIG. 10A, as well as a quad-gate transistor 64, anda “PI”-gate transistor 66 in FIG. 10B, formed in a silicon overinsulator (SOI) wafer 68. In conventional multi-gate devices, an SOIwafer is provided, which includes a substrate with an overlying oxideinsulator and a 20.0-50.0 nm thick semiconductor layer above the oxide.The upper silicon layer is etched away, leaving isolated islands orblocks of silicon, and a gate is formed around the silicon blocks, withthe ends of the blocks being doped to form source/drains, as illustratedin FIGS. 10A and 10B.

Multi-gate designs offer the prospect of improved transistor performanceby alleviating the short channel effects seen in scaled planartransistors. This is due primarily to the ability to invert a largerportion of the channel silicon because the gate extends on more than oneperipheral side of the channel. In practice, however, the conventionalmulti-gate approaches have suffered from cost and performanceshortcomings, because SOI wafers are more expensive than ordinarysilicon substrates and because the channel surface has been etched whilecarving the upper SOI silicon layer into islands or blocks. Accordingly,there remains a need for improved transistor devices and manufacturingtechniques to realize the advantages of scaling while mitigating oravoiding short channel effects and the shortcomings of traditionalmulti-gate transistors.

SUMMARY OF THE INVENTION

The following presents a simplified summary in order to provide a basicunderstanding of one or more aspects of the invention. This summarypresents one or more concepts of the invention in a simplified form as aprelude to the more detailed description that is presented later and isnot an extensive overview of the invention. In this regard, the summaryis not intended to identify key or critical elements of the invention,nor does the summary delineate the scope of the invention.

The invention relates to triple-gate and other multi-gate MOStransistors and methods for fabricating such transistors, in which thetransistors are constructed from a semiconductor body formed above astarting structure using a form structure or mold and spacers, ratherthan by etching into an SOI wafer. This allows control over channeldimensions independent of lithography limitations and avoidance ormitigation of the adverse effects of etched channel surfaces, whileattaining the advantages of multi-gate devices (e.g., inversion of morechannel silicon, reduction in short channel effects, reduced DIBL,etc.), using less expensive starting structures (e.g., silicon wafers,etc.). In addition, the spacers may be formed (e.g., L-shaped) so as tocreate an undercut or re-entrant cavity at the bottom of the formedsemiconductor body. The gate structure can be formed to extend withinthe undercut recess, thus providing for quadruple-gate or 3.5-gatetransistors having semiconductor bodies smaller than a lithographicallypatterned gate length dimension. In one example, a form structure isprovided over a semiconductor wafer with an opening exposing a portionof the wafer. A spacer is formed along sidewalls of the opening andsemiconductor material is deposited in the opening by epitaxial growth,and the form structure and the spacer are then removed. A gate structureis thereafter formed along the top and sides of a central portion of theformed semiconductor body. The spacer may be L-shaped, providing anundercut or recess at the bottom of the semiconductor body sidewall, andthe gate may extend into the undercut area to underlie a portion of theresulting transistor channel.

In one aspect of the invention, a method is provided for fabricating MOStransistors, comprising creating a form structure having an openingexposing a single portion an underlying starting structure, and forminga spacer in the opening of the form structure, where the spacer extendsover part of the starting structure along a sidewall of the formstructure opening. The method further includes forming a semiconductormaterial in the opening to create a formed semiconductor body having asingle generally planar bottom surface overlying the starting structure.The form structure and the spacer are then removed, a gate structure isformed along at least a portion of a top and sides of the semiconductorbody, and portions of the formed semiconductor body are doped to formsource/drains.

The spacer may be formed by depositing a spacer material layer, such assilicon nitride (e.g., Si₃N₄) over the form structure and over theexposed starting structure, such as by chemical vapor deposition (CVD),atomic layer deposition (ALD), or other generally conformal depositionprocess. Thereafter, the spacer material layer is etched to expose aportion of the starting structure, leaving a portion of the spacermaterial layer extending over part of the starting structure along thesidewall of the opening. Following formation of the semiconductor body,the form structure and the spacer may be removed by wet etching the formstructure and the spacer or other isotropic material removal technique,leaving the formed semiconductor body having a single bottom surfaceabove the starting structure. In another implementation, the spacerformation comprises depositing a first spacer material layer (e.g.,silicon nitride) over the form structure and over the exposed startingstructure, and depositing a second spacer material layer (e.g., SiO₂)over the first spacer material layer. The spacer material layers arethen etched, leaving a generally L-shaped portion of the first spacermaterial layer extending over part of the starting structure along thesidewall of the form structure opening.

In another aspect of the invention, transistors are provided, comprisinga semiconductor body with first, second, and third body portionsindividually comprising a generally planar first bottom surfaceoverlying a starting structure, where the first and third body portionsindividually comprise doped source/drains. The second body portioncomprises a top, first and second sides extending laterally between thefirst and third body portions, and a lithography independent widthbetween the first and second sides. A gate structure having a lateralgate length is situated along the top and sides of the second bodyportion, including a conductive gate electrode and a gate dielectricdisposed between the gate electrode and the second body portion. In oneimplementation, the gate length is about 25 nm or less and thelithography independent width of the second body portion is less thanthe gate length, for example, less than one half of the lateral gatelength, such as about one third of the lateral gate length.

According to another aspect of the invention, a transistor is provided,comprising a semiconductor body with first, second, and third bodyportions individually comprising a planar bottom surface overlying asemiconductor starting structure, where the first and third bodyportions comprise doped source/drains. The second body portion comprisesa second bottom surface spaced from the starting structure, togetherwith a top and sides extending laterally between the first and thirdbody portions. A gate structure is provided along the top and sides ofthe second body portion and along at least a portion of the secondbottom surface between the second body portion and the startingstructure.

The following description and annexed drawings set forth in detailcertain illustrative aspects and implementations of the invention. Theseare indicative of but a few of the various ways in which the principlesof the invention may be employed.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a flow diagram illustrating an exemplary method forfabricating a multiple-gate MOS transistor with a lithographyindependent silicon body thickness in accordance with an aspect of thepresent invention;

FIGS. 2A-10C are partial top plan and side elevation views in sectionillustrating a portion of a semiconductor device with an exemplarytriple-gate MOSFET device in accordance with the invention, shown atvarious stages of fabrication processing;

FIGS. 11A and 11B are simplified partial perspective views illustratingseveral conventional multi-gate transistor designs;

FIG. 12 is a flow diagram illustrating another exemplary method forfabricating a multiple-gate MOS transistor in accordance with thepresent invention; and

FIGS. 13A-21C are partial top plan and side elevation views in sectionillustrating a portion of a semiconductor device with another exemplarymultiple-gate MOSFET device in accordance with the invention, shown atvarious stages of fabrication processing.

DETAILED DESCRIPTION OF THE INVENTION

The present invention will now be described with reference to theattached drawing figures, wherein like reference numerals are used torefer to like elements throughout, and wherein the illustratedstructures and devices are not necessarily drawn to scale. The inventionrelates to transistor devices and fabrication methods wherein asemiconductor body is provided over a starting structure with asemiconductor body dimension that is independent of lithographytechnology limitations. This allows tuning or optimization of transistorperformance, including improved volume inversion in a multi-gatetransistor channel, wherein the semiconductor body or thickness can bemade smaller than the device gate length, for example, less than halfthe gate length.

In the examples illustrated and described below, the semiconductor bodyis formed in a cavity of a temporary form structure having spacerstherein, through deposition of epitaxial silicon or other semiconductormaterial, whereafter the form structure and the spacer are removed and agate structure is formed. The device features and structures of theinvention having lithography independent dimensions, including thesemiconductor body dimensions, include any dimension smaller than thesmallest feature size that can be fabricated using lithographytechniques (e.g., photolithographically patterned masks used with etchprocesses to define device features or structures). In this regard,transistor structures and semiconductor bodies therefor can befabricated using the illustrated spacer techniques or other processeswithin the scope of the present invention.

FIG. 1 presents an exemplary method 2 for fabricating a transistor inaccordance with the present invention. Although the exemplary method 2and the other methods illustrated herein are depicted and describedbelow as a series of acts or events, the present invention is notlimited by the illustrated ordering of such acts or events. For example,some acts may occur in different orders and/or concurrently with otheracts or events apart from those illustrated and/or described herein, inaccordance with the invention. In addition, not all illustrated stepsmay be required to implement a methodology in accordance with thepresent invention. Further, the methods according to the presentinvention may be implemented in association with the formation and/orprocessing of structures illustrated and described herein (e.g., device100 in FIGS. 2A-10C below) as well as in association with otherstructures and devices not illustrated.

The method 2 begins at 4, and front end processing is performed at 6,for example, including formation of wells and any other initialprocessing of a semiconductor substrate, SOI wafer, or other startingstructure. Isolation structures are formed at 8 in field regions of thestarting structure, for example using SiO₂ field oxide or other suitableisolating materials, which may be fabricated by local oxidation ofsilicon (LOCOS), shallow trench isolation (STI), or other suitabletechniques.

At 10 and 12, a form structure is created for use in forming asemiconductor material structure (e.g., a formed semiconductor body)above the starting structure. As illustrated and described below withrespect to FIGS. 3A-3C, the form structure may be formed directly overthe starting structure and the isolation structures thereof, to coverthe isolation structures, and to expose a single portion of the startingstructure (e.g., silicon substrate) through an opening in which asemiconductor body will be formed. The form structure may be createdusing any suitable materials by any fabrication techniques within thescope of the invention. In the exemplary method 2, form structurematerial is deposited at 10 as a layer over the starting structure andover the isolation structures by chemical vapor deposition (CVD), atomiclayer deposition (ALD), or other deposition process, to a thicknessgenerally corresponding to a desired final transistor gate length. At12, the deposited form layer material is selectively patterned usingsuitable masking and etching techniques (e.g., reactive ion etching(RIE)), leaving an opening through which a single portion of thestarting structure is exposed for the transistor semiconductor body. Athin protective etch-stop layer may optionally be deposited over thestarting structure and isolation structures (e.g., SiO₂ layer having athickness of about 50 Å or less) prior to creation of the form structureat 10, to protect the starting structure during patterning of the formstructure at 12, which is then removed following the etching at 12.

One aspect of the invention provides for creating a semiconductor bodyhaving one or more structural dimensions that are independent oflithography limitations. In the method 2, a spacer is formed at 14 and16 extending over part of the starting structure along a sidewall of theform structure opening. At 14, a spacer material layer is deposited overthe form structure and over the exposed starting structure using CVD,ALD, or other suitable deposition process to form a generally conformallayer. The spacer material layer may be any suitable material, forexample silicon nitride (Si₃N₄), silicon dioxide (SiO₂), etc. The spacermaterial layer is then etched at 16 to expose a portion of the startingstructure, leaving a portion of the spacer material layer extending overpart of the starting structure along the sidewall of the form structureopening. The etching at 16 may be any suitable material removal process,preferably RIE or other anisotropic etching, so that a spacer is definedalong the sidewalls of the form structure opening without the need formasking.

In this manner, the form structure opening is effectively reduced insize, wherein some or all of the opening dimensions (e.g., width) may bereduced beyond the smallest dimension that could be formed throughlithographic techniques. This may be advantageously employed inconstructing a channel portion of the formed semiconductor body having avertical depth roughly the same as the subsequently patterned gatelength and a lateral semiconductor body width that is less than the gatelength. In this regard, the exemplary devices illustrated and describedbelow comprise a channel depth that is generally dependent on thedeposition thickness of the form layer (e.g., discounted by the amountof form layer material removed during any subsequent planarization at20), a gate length that is dependent upon lithography processlimitations, and a semiconductor body that is lithography independent.For example, in the device 100 below (FIGS. 2A-10C), the semiconductorbody may be made less than about one half the gate length, such as aboutone third of the gate length dimension.

Once the form structure and spacer have been formed, a semiconductorbody is then created (e.g., formed) at 18 and 20 in the form structureopening using any suitable semiconductor materials and processing steps.In the exemplary implementation, a semiconductor material is formed at18 in the opening of the patterned form layer material, for example, byepitaxial growth of silicon (Si), silicon germanium (SiGe), germanium(Ge), gallium arsenide (GaAs), or other suitable semiconductor material.The epitaxial silicon can be formed in the opening in a variety of wayswithin the scope of the invention. The epitaxial growth can be performedeither selectively or non-selectively to the exposed substrate. In theillustrated implementation, the epitaxial silicon is deposited at 18selectively to the semiconductor substrate starting structure within theopening of the form structure. In another possible approach, anon-selective epitaxial deposition is performed, wherein epitaxialsilicon is formed at 18 over the starting structure and in the formopening, after which the wafer is planarized at 20. In another possibleimplementation, a selective deposition can be terminated once the top ofthe form layer is reached, followed by a non-selective deposition thatdeposits both on the semiconductor body and the form layer, after whichthe device is planarized at 20.

An optional surface preparation step may be performed, such as a wetclean operation, before epitaxial deposition or in-situ as part of anepitaxial deposition process at 18 to heal any damage to the substratesurface, to remove any absorbed debris, and to remove any optional SiO₂etch-stop layer material remaining over the starting structure material.The epitaxial deposition at 18 may also include a combination of etchingof the underlying silicon starting structure and deposition of newlyformed epitaxial silicon, wherein the pre-existing starting structuresilicon may be initially etched slightly prior to beginning depositionof new material, by which damage caused by patterning the form structuremay be repaired.

After deposition of the semiconductor body material, if needed, thewafer can optionally be planarized at 20, for example, by chemicalmechanical polishing (CMP) or other suitable technique. This leaves agenerally planar structure having the form structure material exposedwith the semiconductor body structure in the form structure openingabove the starting material. The form structure material and the spacerare then removed at 22, for example, by selective etching, or othersuitable material removal technique, leaving the formed semiconductorbody above the starting structure. In a preferred implementation, wetetching is employed at 22 to mitigate damage to the top and sides of theformed semiconductor body, for example, a wet etch process using aphosphoric acid wet clean which is selective both to a silicon formedsemiconductor body and any optional SiO₂ etch-stop layer material thatwas previously deposited under the form layer.

This leaves a formed semiconductor body that comprises first, second,and third body portions, wherein the second body portion extends betweenthe first and third body portions and has first and second sides and atop. Because the spacer was employed in the form structure opening, oneor more dimensions of the formed semiconductor body are lithographyindependent, wherein the second body portion has a lateral widthdimension that can be made smaller than the length dimension of asubsequently patterned gate structure. This lithography independentcontrol over the semiconductor body dimensions allows optimization ofmulti-gate MOS transistor device performance, including improved volumeinversion in a triple-gate device.

A gate structure is formed at 24-28 along a portion of a top and sidesof the formed semiconductor body, having a conductive gate electrode anda gate dielectric disposed between the gate electrode and the formedsemiconductor body. A gate dielectric is formed at 24, for example, athin SiO₂, SiON, high-k, or other suitable dielectric material, formedby a thermal oxidation process, a deposition process, or other suitabletechnique. The gate dielectric material is formed over the side andupper surfaces of the formed semiconductor body. A gate electrodematerial layer (e.g., polysilicon, metal, or other suitable material) isthen deposited at 26 over the gate dielectric along the top and sides ofthe semiconductor body. The gate dielectric and gate electrode layersmay be formed to any suitable thickness at 24 and 26, respectively,using any suitable growth/deposition processes within the scope of theinvention. At 28, a gate etch is performed to selectively removeportions of the gate electrode material, which may also remove portionsof the gate dielectric material as well. Any suitable masking andetching processes may be employed at 28 (e.g., reactive ion etchingusing a lithographically created etch mask, or lithography independentmaterial removal processes, etc.) to pattern the gate layers, therebydefining a patterned transistor gate structure.

In the exemplary device 100 illustrated and described in FIGS. 2A-10Cbelow, the gate structure includes multiple gate segments or portionsextending along portions of the top and lateral sides of the second bodyportion of the formed semiconductor body. In this case, all or a part ofthe covered portion of the formed semiconductor body will operate as atransistor channel, and part or all of the first and third body portionswill be doped to operate as source/drains in the completed transistordevice. It is noted at this point that the use of spacers in the formstructure allows the semiconductor body dimension to be adjusted beyondthe limits of a particular lithography process, wherein thesemiconductor body can be smaller than the gate length dimension, evenfor a scaled gate length device.

At 30, a shallow drain extension dopant implantation is performed toprovide dopants in source/drain portions of the formed semiconductorbody (e.g., in the first and third body portions). The drain extensionimplant at 30 may also provide dopants to the gate electrode, forexample, where the electrode is polysilicon, to render the gateelectrode conductive. The patterned gate structure and the semiconductorbody may then be encapsulated, for example, via a reoxidation (RE-OX)process that oxidizes the exposed semiconductor surfaces thereof or viaother suitable encapsulation materials and processes. At 32, sidewallspacers are formed along the sidewalls of the encapsulated gatestructure and the sidewalls of the formed semiconductor body, and asource/drain implant is performed at 34 to further dope the source/drainportions. The source/drain implant and/or the drain-extension implantoperations at 30 and 34 may be angled implants to fully define thesource/drain regions of the formed semiconductor body.

Metal silicide gate and source/drain contacts are then formed throughsilicide processing at 36 to provide a metal silicide gate contact abovethe gate electrode as well as source/drain silicide contacts over thesource/drains, for example, by deposition of nickel over the device andannealing, followed by removal of unreacted nickel. Back end processing,including metalization is then performed at 38 to complete the devicefabrication processing before the method 2 ends at 40.

Referring now to FIGS. 2A-9C, an exemplary triple-gate MOS transistor isillustrated in a semiconductor device 100 in accordance with theinvention, undergoing processing at various stages of fabrication. Inthis example, FIGS. 2A, 3A, 4A, 5A, 6A, 7A, 8A, 9A, and 10A illustratesectional top plan views of the device 100 and the other figures areside and end views as shown by the sections lines in the correspondingplan views. The device 100 is illustrated undergoing fabricationprocessing generally in accordance with the method 2 described above,although transistors of the present invention may be fabricated by othermethods. As shown in FIGS. 2A-2C, the device 100 comprises a siliconsubstrate 104 starting structure and SiO₂ STI isolation structures 106formed in field regions of the substrate 104. The isolation structures106 are fabricated around the periphery of an “H”-shaped portion of thestarting structure 104, as illustrated in the top plan view of FIG. 2A.The central portion of the H-shape has a width 107 generallycorresponding to a desired gate length for the triple-gated transistorto be formed thereover.

A silicon nitride (e.g., Si₃N₄) form structure 108 is created in FIGS.3A-3C above the substrate 104, which is generally aligned with theunderlying STI structures 106. The form structure 108 may be createdusing any suitable materials by any fabrication techniques within thescope of the invention. In the illustrated implementation, siliconnitride (e.g., Si₃N₄) or other suitable material 108 is deposited overthe substrate 104 and over the isolation structures 106 by chemicalvapor deposition (CVD), atomic layer deposition (ALD), or otherdeposition process. The material 108 can be formed to any thickness 109,for example, where the deposition thickness 109 is generally the same asthe desired final transistor gate length (e.g., about 25 nm or less inone example). The form layer material 108 is then selectively patterned,using suitable masking and etching techniques, leaving an openingthrough which a single contiguous portion of the starting structure 104is exposed. Although the patterned form structure 108 is aligned withthe isolation structure 106 in the exemplary device 100, alternativeimplementations are possible wherein the isolation structure 106 and thetemporary form structure 108 do not correspond with one another or arenot strictly aligned. In the device 100, the patterned form structure108 includes an “H”-shaped cavity or opening exposing the “H”-shapedportion of the substrate 104, where the central portion of the openinghas a width 109 a generally equal to the thickness 109 and to thedesired final transistor gate length. Other form structure openingshapes are possible within the scope of the invention, wherein theillustrated “H” shape advantageously provides reasonable semiconductorlength, width, and depth dimensions for the resulting transistorchannel, while also providing sufficient contact area for thesource/drains thereof. However, the opening and the resulting formedsemiconductor body may be of any shape within the scope of theinvention, for example, including but not limited to rectangles,squares, etc.

A spacer 108 a is then formed in FIGS. 3D-3F along the sidewalls of theform structure opening above the substrate 104. In FIG. 3D, a spacermaterial layer 108 a is deposited over the form structure 108 and overthe exposed starting structure 104 via a CVD deposition process 111. Thespacer material layer may be any suitable material, for example siliconnitride (Si₃N₄), silicon dioxide (SiO₂), etc. An anisotropic RIE etchprocess 113 is then performed in FIGS. 3E and 3F to remove the thinnerportions of the spacer material 108 a, leaving spacers 108 a along thesidewalls in the opening of the form structure 108 as shown in FIG. 3F.In the illustrated fabrication example, the conformality and thicknessof the deposited spacer material layer 108 a, the anisotropic nature andduration of the etch process 113, and the height of the form structure108 play a role in the lateral thickness of the finished spacers 108 a,which are further illustrated in FIGS. 4A-4E.

In the illustrated example, the deposition thickness 109 (FIG. 3B) ofthe form structure 108 is generally equal to the gate length for thetransistor. The deposition thickness of the spacer layer 108 a, and theduration of the etch process 113 are tailored to provide a lateral width109 b (FIG. 4C) of the central portion of the H-shaped formstructure/spacer opening that is less than the eventual transistor gatelength. This lateral width 109 b will subsequently determine thesemiconductor body of the triple-gate transistor (e.g., width 110 _(W)in FIG. 5C below), whereas lithography limitations dictate the minimumpatterned gate length of the transistor (e.g., gate length 114 _(L) inFIGS. 8A and 8B below). The lithography independent width of thestructure/spacer opening and hence the eventual semiconductor body canbe made about one half of the gate length or less (e.g., width 109 c inFIG. 4D), for example, about one third of the gate length (e.g., width109 d in FIG. 4E). Any form structure thickness 109 may be used and thespacer 108 a may be constructed using other materials and formationtechniques within the scope of the invention.

A formed semiconductor body 110 is then created in FIGS. 5A-5C in theopening of the form structure 108, using any suitable semiconductormaterials and formation techniques. In the exemplary device 100, anepitaxial semiconductor material 110 is deposited by epitaxial growthprocessing in the form structure opening, for example, by formation ofepitaxial silicon (Si), silicon germanium (SiGe), germanium (Ge),gallium arsenide (GaAs), or other suitable semiconductor material (e.g.,epitaxial silicon 110 in the device 100). As discussed above withrespect to FIG. 1, other implementations are possible in which theepitaxial semiconductor material is deposited over the startingstructure 104 and/or over the patterned form layer material 106. In thecase where the epitaxial growth extends above the form structure 108,the device 100 can optionally be planarized, for example, by chemicalmechanical polishing (CMP) or other suitable technique, leaving thedevice 100 as illustrated in FIGS. 5A-5C. By any of these approaches,the formed semiconductor body 110 thus comprises first, second, andthird body portions 110 a, 110 b, and 110 c, respectively, extendingdownward from the planarized top surface to a single generally planarbottom surface above the substrate 104. The body portions are locatedgenerally along a horizontal axis in a plane parallel to the plane ofthe substrate 104 to provide a horizontal transistor body, althoughother relative orientations are possible.

The first and third body portions 110 a and 110 c, respectively, will besubsequently doped to provide transistor source/drains, and a gatestructure will be formed over portions of the top and sidewalls of thecentral second body portion 110 b to provide a transistor channeltherein that extends downward toward the starting structure 104. Thechannel of the second body portion 110 b comprises a prospective channellength 110 _(L), a semiconductor body 110 _(W), and a channel depth 110_(D), as shown in FIGS. 5A-5C, wherein the channel length 110 _(L), andchannel depth 110D, are generally equal and greater than thesemiconductor body 110 _(W).

In FIGS. 6A-6C, the form structure 108 is removed, for example, by wetetching or other process, leaving the semiconductor body 110 disposedabove the substrate 104. A gate oxide 112 is formed in FIGS. 7A-7C overthe semiconductor body 110 and a gate electrode material layer 114(e.g., polysilicon, metal, or other suitable material) is deposited overthe gate dielectric 112. The gate is etched in FIGS. 8A-8C to removeportions of the gate electrode material 114 from the first and thirdbody portions 110 a and 110 c, respectively. The gate etch also toremoves the material 114 over part of the second body portion 110 b toleave a patterned gate structure having a gate length 114 _(L)corresponding to the channel length 110 _(L), wherein the gate etch may,but need not, remove portions of the gate dielectric 112. In theillustrated example, the gate length 114 _(L) roughly corresponds to thechannel structure depth 110 _(D) (e.g., about 25 nm or less in theexemplary device 100), wherein the semiconductor body 110 _(W) is lessthan the gate length 114 _(L).

In FIGS. 9A-9C, source/drain regions 116 a and 116 b are doped with n orp-type dopant species (e.g., depending upon whether an NMOS or PMOStransistor is being constructed) in the first and third body portions110 a and 110 b, respectively. The source/drain 116 a is indicated as asource “S” and the source/drain 116 b is indicated as a drain “D” in thefigures, although the source/drains 116 are interchangeable in theillustrated example. The source/drains 116 a and 116 b are formed by ashallow drain extension dopant implantation to introduce dopants intosource/drain regions 116, followed by formation of sidewall spacers 118along the lateral sidewalls of the patterned gate structure (indicatedas “G” in the figures). The source/drains 116 a and 116 b are furtherdefined by a source/drain implant to provide additional dopants to thesource/drain regions 116 a and 116 b following formation of the sidewallspacers 118. The drain-extension implant and/or the source/drain implantmay also provide dopants to the patterned gate electrode material 114 inthe case of a polysilicon gate, to increase the conductivity of the gateelectrode 114.

FIGS. 10A-10C illustrate the device 100 after a first metalization levelhas been constructed, in which silicide 120 is formed over the patternedgate electrode 114 as well as over the source/drains 116 a and 116 b viaany suitable silicidation processing, for example, by depositing nickelover the device 100 and annealing, followed by removal of unreactednickel. A pre-metal dielectric (PMD) 122 is then deposited and source,drain, and gate contacts 124 are formed through the PMD material 122,after which further metalization (interconnect) processing is performedto complete the device 100 (not shown). The invention thus provides amulti-gate transistor comprising a formed semiconductor body comprisingfirst, second, and third body portions with a generally planar firstbottom surface overlying a starting structure, in which the second bodyportion comprises a lithography independent lateral width (e.g.,semiconductor body 110 _(W)).

This aspect of the invention may thus be employed to facilitateoptimization of volume inversion and/or other performance parameters,even where the transistor is scaled to the minimum gate lengthachievable for a particular lithography technology. In this regard, thesemiconductor body 110 _(W) may be made less than half the gate length114 _(L), for example, about one third of the gate length 114 _(L), byproviding wider spacers 108 a, as shown in FIGS. 4D and 4E above. Otherimplementations are possible, for example, dual-gate devices having gateportions extending along two sides (e.g., or one side and the top) ofthe central second body portion 110 b.

Referring now to FIGS. 12-21C, another aspect of the inventionfacilitates creation of MOS transistors having more that 3 gates byfabricating a formed semiconductor body having an undercut or recess, inwhich a portion of the gate structure is formed. In this manner, thegate extends along two or more of the sides and top of the channel, aswell as under a portion of the channel, as illustrated and describedhereinafter. FIG. 12 illustrates a method 202 for fabricatingtransistors in accordance with this aspect the invention. Beginning at204, the method 202 comprises front end processing at 206, for example,including formation of wells and other initial processing of a startingstructure, and isolation structures are formed at 208 in field regionsof the starting structure. A form structure is deposited and patternedat 210 and 212 for use in forming a semiconductor body, for example,using the techniques and materials described with respect to FIG. 2above.

An L-shaped spacer is then constructed along the sidewalls of the formstructure opening, so that the subsequently deposited semiconductor bodyincludes an undercut or recess (e.g., creating a second bottom surfacespaced from the starting structure). Such a spacer can be formed usingany suitable techniques, wherein the illustrated example provides fordeposition and etching of two spacer material layers at 214-220. It isnoted that the illustrated technique advantageously avoids maskedetching, and is thus lithography independent, wherein the semiconductorbody and other dimensions of the semiconductor body can be made smallerthan the minimum patternable feature size (e.g., smaller than a scaledgate length).

First and second spacer material layers are deposited at 214 and 216,respectively, preferably using CVD, ALD, or other conformal depositiontechniques, and any suitable materials, such as silicon nitride and/orsilicon dioxide. In the illustrated implementation, silicon nitride isdeposited at 214 over the form structure and over the exposed startingstructure, and silicon dioxide is deposited at 216 over the first spacermaterial layer to any suitable thicknesses via CVD processes. At 218,the first and second spacer material layers are etched, for example, byRIE or other generally anisotropic etch processing, to create agenerally L-shaped portion of the first spacer material layer extendingover part of the starting structure along the sidewall of the formstructure opening. The same etch process may be continued or a secondetch process may be employed at 220 to remove remaining second spacermaterial, leaving the L-shaped spacer along the bottom corners of theform structure opening. The dimensions of the L-shaped spacer impact thevertical and lateral dimensions of the undercut in the subsequentlyformed semiconductor body, and hence determine the extent to which thegate structure underlies the channel, and the thickness thereof.Accordingly, the dimensions of the L-shaped spacer may be controlled,for example, by adjusting the deposition thickness of the form layer, ofthe first spacer material layer, and/or of the second spacer materiallayer, as well as through adjustment of the spacer etch duration.

Semiconductor material is then formed at 222 in the opening of thepatterned form structure by epitaxial growth or other deposition ofsilicon or other semiconductor (e.g., Si, SiGe, Ge, GaAs, etc.), and ifneeded, the wafer can optionally be planarized at 224 (e.g., using CMP).The form structure material and the spacer are then removed at 226, forexample, by wet etching. The remaining formed semiconductor bodycomprises first and second bottom surfaces, the first overlying thestarting structure and the second in a recess or undercut region, whichis spaced from the starting structure by virtue of the L-shaped spacerpresent during semiconductor body deposition at 222.

In the exemplary device 300 illustrated and described below, theundercut feature of the lower portion of the semiconductor body extendsalong the entire periphery of the semiconductor body. However, otherimplementations are possible within the scope of the invention, whereinthe undercut only extends along a portion of the semiconductor body. Forexample, the undercut may extend along the channel portion of thesemiconductor body, such that a gate structure can be formed in theundercut so as to be disposed beneath a portion of the channel.Moreover, the undercut technique illustrated in the method 2 and thedevice 300 may be employed alone or in combination with the abovetechniques for providing lithography independent semiconductor bodydimensions (e.g., semiconductor body, etc.), wherein all suchimplementations are contemplated as falling within the scope of theinvention and the appended claims.

A gate structure is formed at 228-232 along a portion of a top and sidesof the formed semiconductor body, and in the undercut between theunderlying starting structure and the second bottom surface of thesemiconductor body. A gate dielectric is formed at 228, for example, bya thermal oxidation process, a deposition process, or other materialformation technique, which covers the exposed portions of the formedsemiconductor body, including the top, sides, and second bottom surfacethereof. A gate electrode material layer (e.g., polysilicon, metal,etc.) is deposited at 230 over the gate dielectric, which fills all or aportion of the undercut in the lower semiconductor body.

A gate etch is performed at 232 using any suitable patterning techniquesto selectively remove portions of the gate electrode material, which mayalso remove portions of the gate dielectric material. The gate etch at232 defines a patterned transistor gate structure with multiple gatesegments that extend along portions of the top and sides of thesemiconductor body, as well as along a portion of the second bottomsurface in the undercut area. The portion of the semiconductor bodystructure covered by the patterned gate structure operates as atransistor channel (e.g., all or part of the second body portion 310 bin the device 300 below), and portions of the remaining semiconductorbody (e.g., body portions 310 a and 310 c below) will be doped tooperate as source/drains.

At 234, a shallow drain extension dopant implantation is performed toprovide dopants in source/drain portions of the formed semiconductorbody (e.g., in the first and third body portions), as well as in thegate electrode, after which the patterned gate and the semiconductorbody may be encapsulated. Sidewall spacers are formed at 236 along thesidewalls of the encapsulated gate structure and the sides of the formedsemiconductor body, which may also extend into portions of the undercutregion. A source/drain implant is performed at 238 to further dope thesource/drain portions, which may be an angled implant, and metalsilicide gate and source/drain contacts are formed at 240. Back endprocessing, including metalization is then performed at 242 to completethe device fabrication processing and the method 202 ends at 244.

FIGS. 13A-21C illustrate an exemplary triple-gate MOS transistor isillustrated in a semiconductor device 300, undergoing processing atvarious stages of fabrication, generally according to the method 202above. FIGS. 14A, 15A, 16A, 17A, 18A, 19A, 20A and 21A illustratesectional top plan views of the device 300 and the other figures areside and end views as shown by the sections lines in the correspondingplan views. Referring initially to FIGS. 13A-14C, the device 300comprises a silicon substrate 304 starting structure and SiO₂ STIisolation structures 306 formed in field regions of the substrate 304around the periphery of an “H”-shaped portion of the starting structure304. The central portion of the H-shape has a width 307 (FIG. 14A)generally corresponding to a desired gate length for the triple-gatedtransistor to be formed thereover in the illustrated example.

As shown in FIG. 13A, a form structure 308 is created above thesubstrate 304, which is generally aligned with the underlying STIstructures 306. The form structure 308 may be created using any suitablematerials by any fabrication techniques within the scope of theinvention. In the illustrated example, silicon nitride (e.g., Si₃N₄)material 308 is deposited to a thickness 309 generally the same as thedesired final transistor gate length by CVD, ALD, or other depositionprocess. The deposited form layer material 308 is then selectivelypatterned, leaving an opening through which a single contiguous portionof the starting structure 304 is exposed. In this example, the formstructure is formed with an “H”-shaped cavity or opening exposing the“H”-shaped portion of the substrate 304, where the central portion ofthe opening has a width 309 a (FIG. 14C) generally equal to thethickness 309 and to the desired final transistor gate length, althoughthe invention is not limited to the illustrated “H” shape.

In FIG. 13B, first and second spacer material layers 308 a and 308 b,respectively, are deposited, using CVD, ALD, or other suitable process.The spacer layers 308 a and 308 b may be any suitable material andthickness, such as Si₃N₄ and SiO₂, respectively, each being formed to athickness about one sixth of the desired gate length in the illustratedexample. The spacer material layers 308 a and 308 b are then etched inFIG. 13C via an RIE etch process 311. This initially leaves a generallyL-shaped portion of the first spacer material layer 308 a extending overpart of the starting structure along the sidewall of the form structureopening, with a remaining portion of the second layer 308 b thereover,as shown in FIGS. 14A-14C. At this point, the opening in the centralportion of the form/spacer structure has a width 309 b (FIG. 14C)approximately one third of the width 309 a.

The etch process 311 is continued to remove remaining second spacermaterial 308 b as shown in FIGS. 15A-15C, leaving the L-shaped spacer308 a along the bottom corners of the form structure opening. As shownin FIG. 15C, the central portion of the form/spacer structure has anupper width 309 c about two thirds of the width 309 a, and a lower width309 b about one third of the width 309 a. The dimensions of theremaining spacer 308 a may be different than those of the illustrateddevice 300 within the scope of the invention, for example, where thedimensions may be adjusted through changes in the form structurethickness 309, the deposition thicknesses of the spacer material layers308 a and 308 b, and the duration of the etch process 311. Any formstructure thickness 309 may be used and the spacer 308 a may beconstructed using other materials and formation techniques within thescope of the invention. In the device 300, the lateral upper width 309 cdetermines the semiconductor body of the quad-gate transistor (e.g.,width 310 _(W) in FIG. 17C below).

A formed semiconductor body 310 is then created in FIGS. 16A-16C in theopening of the form/spacer, by epitaxial growth or other deposition ofsilicon or other suitable semiconductor materials (e.g., Si, SiGe, Ge,GaAs, etc.), after which the wafer can optionally be planarized (e.g.,using CMP). In FIGS. 17A-17C, the form structure 308 and spacer 308 aare removed, for example, by wet etching or other process, leaving thesemiconductor body 310 disposed above the substrate 304. The formedsemiconductor body 310 comprises first, second, and third body portions310 a, 310 b, and 310 c, respectively, extending downward from theplanarized top surface to a first generally planar bottom surfaceoverlying the substrate 304. The body portions are located generallyalong a horizontal axis in a plane parallel to the plane of thesubstrate 304 to provide a horizontal transistor body, although otherrelative orientations are possible.

The semiconductor body 310, moreover, includes a recess or undercutregion or area 310 _(U) along the lower periphery of the semiconductorbody 310, comprising a generally horizontal second bottom surface 310 espaced from the starting structure 304, and a generally vertical inneror recessed side surface 310 f, as shown in FIGS. 17A-17C. The first andthird body portions 310 a and 310 c, respectively, will be subsequentlydoped to provide transistor source/drains. A patterned gate structurewill be formed over portions of the top and sidewalls of the centralsecond body portion 310 b, as well as in the undercut region 310 _(U)thereof, to create a transistor channel that extends downward toward thestarting structure 304. As illustrated in FIGS. 17A-17C, the channel ofthe second body portions 310 b comprises a prospective channel length310 _(L), a semiconductor body 310 _(W), and a channel depth 310 _(D),as shown in FIGS. 16A-16C, wherein the channel length 310 _(L), andchannel depth 310 _(D), are generally equal and greater than thesemiconductor body 310 _(W).

In FIGS. 18A-18C, a gate oxide 312 is formed over the semiconductor body310 and a gate electrode material layer 314 (e.g., polysilicon, metal,or other suitable material) is deposited over the gate dielectric 312,wherein the gate layers 312 and 314 are also formed within the undercutarea 310 _(U). The gate is etched in FIGS. 19A-19C to remove portions ofthe gate electrode material 314 from the first and third body portions310 a and 310 c, respectively, and from part of the second body portion310 b to leave a patterned gate structure having a gate length 314 _(L)corresponding to the channel length 310 _(L). In the illustratedexample, the gate length 314 _(L) roughly corresponds to the channelstructure depth 310 _(D) (e.g., about 25 nm or less in the exemplarydevice 300), and the semiconductor body 310 _(W) is less than the gatelength 314 _(L).

In FIGS. 20A-20C, source/drain regions 316 a and 316 b are doped with nor p-type dopant species in the first and third body portions 310 a and310 b, respectively, wherein the source/drain 316 a is indicated as asource “S” and the source/drain 316 b is indicated as a drain “D” in thefigures. The source/drains 316 a and 316 b are formed by a shallow drainextension dopant implantation to introduce dopants into source/drainregions 316, followed by formation of sidewall spacers 318 along thelateral sidewalls of the patterned gate structure (indicated as “G” inthe figures). The source/drains 316 a and 316 b are then further definedby a source/drain implant to provide additional dopants thereto. A firstmetalization level is then constructed, as shown in FIGS. 21A-21C,including suicide contacts 320 formed over the patterned gate electrode314 and the source/drains 316 a and 316 b. A pre-metal dielectric (PMD)322 is then deposited and source, drain, and gate contacts 324 areformed through the PMD material 322, after which further metalization(interconnect) processing is performed to complete the device 300 (notshown).

The invention thus provides a multi-gate transistor comprising a formedsemiconductor body including first, second, and third body portions witha generally planar first bottom surface overlying a starting structure,wherein the gate extends into the recess in the formed semiconductorbody. This aspect of the invention may be employed in forming dual,triple, or quad-gate transistors, wherein the gate underlies a portionof the channel of the semiconductor body. Moreover, this L-shapedspacer/undercut semiconductor body approach may be employed alone or incombination with the lithography independent feature sizing aspects ofthe invention illustrated and described above to facilitate optimizationof volume inversion and/or other performance parameters, even where thetransistor is scaled to the minimum gate length achievable for aparticular lithography technology.

Although the invention has been illustrated and described with respectto one or more implementations, alterations and/or modifications may bemade to the illustrated examples without departing from the spirit andscope of the appended claims. In particular regard to the variousfunctions performed by the above described components or structures(assemblies, devices, circuits, systems, etc.), the terms (including areference to a “means”) used to describe such components are intended tocorrespond, unless otherwise indicated, to any component or structurewhich performs the specified function of the described component (e.g.,that is functionally equivalent), even though not structurallyequivalent to the disclosed structure which performs the function in theherein illustrated exemplary implementations of the invention. Inaddition, while a particular feature of the invention may have beendisclosed with respect to only one of several implementations, suchfeature may be combined with one or more other features of the otherimplementations as may be desired and advantageous for any given orparticular application. Furthermore, to the extent that the terms“including”, “includes”, “having”, “has”, “with”, or variants thereofare used in either the detailed description and the claims, such termsare intended to be inclusive in a manner similar to the term“comprising”.

1. A method of fabricating a MOS transistor, the method comprising:creating a form structure above a starting structure, the form structurehaving an opening exposing a single portion of the starting structure;forming a spacer in the opening of the form structure, the spacerextending over part of the starting structure along a sidewall of theform structure opening; forming a semiconductor material in the openingof the form structure to create a formed semiconductor body having asingle generally planar bottom surface above the starting structure;removing the form structure and the spacer; forming a gate structuredisposed along at least a portion of a top and sides of the formedsemiconductor body, the gate structure comprising a conductive gateelectrode and a gate dielectric disposed between the gate electrode andthe formed semiconductor body; and doping portions of the formedsemiconductor body to form source/drains.
 2. The method of claim 1,wherein the formed semiconductor body comprises a first body portion, asecond body portion, and a third body portion, the second body portionbeing disposed between the first and third body portions and havingfirst and second sides and a top, and wherein the gate structure isformed along at least a portion of the top and sides of the second bodyportion.
 3. The method of claim 1, wherein forming the spacer comprises:depositing a first spacer material layer over the form structure andover the exposed starting structure; depositing a second spacer materiallayer over the first spacer material layer; and etching the first andsecond spacer material layers, leaving a portion of the first spacermaterial layer extending over part of the starting structure along thesidewall of the form structure opening.
 4. The method of claim 3,wherein the spacer is generally L-shaped.
 5. The method of claim 4,wherein depositing the first spacer material layer comprises depositingsilicon nitride over the form structure and over the exposed startingstructure, and wherein depositing the second spacer material layercomprises depositing silicon dioxide over the first spacer materiallayer.
 6. The method of claim 5, wherein removing the form structure andthe spacer comprises wet etching the form structure and the spacer,leaving the formed semiconductor body having a single generally planarbottom surface above the starting structure.
 7. The method of claim 3,wherein removing the form structure and the spacer comprises wet etchingthe form structure and the spacer, leaving the formed semiconductor bodyhaving a single generally planar bottom surface above the startingstructure.
 8. The method of claim 3, wherein the first and second spacermaterial layers are deposited using chemical vapor deposition or atomiclayer deposition.
 9. The method of claim 1, wherein forming the spacercomprises: depositing a spacer material layer over the form structureand over the exposed starting structure; and etching the spacer materiallayer to expose a portion of the starting structure, leaving a portionof the spacer material layer extending over part of the startingstructure along the sidewall of the form structure opening.
 10. Themethod of claim 9, wherein depositing the spacer material layercomprises depositing silicon nitride over the form structure and overthe exposed starting structure.
 11. The method of claim 9, whereinremoving the form structure and the spacer comprises wet etching theform structure and the spacer, leaving the formed semiconductor bodyhaving a single generally planar bottom surface above the startingstructure.
 12. The method of claim 9, wherein the spacer material layeris deposited using chemical vapor deposition or atomic layer deposition.13. A transistor, comprising: a semiconductor body comprising first,second, and third body portions individually comprising a generallyplanar first bottom surface overlying a starting structure, the firstand third body portions individually comprising doped source/drains, thesecond body portion comprising a top, first and second sides extendinglaterally between the first and third body portions, and a lithographyindependent width between the first and second sides; and a gatestructure disposed along at least a portion of the top and sides of thesecond body portion, the gate structure comprising a conductive gateelectrode and a gate dielectric disposed between the gate electrode andthe second body portion.
 14. The transistor of claim 13, wherein thefirst, second, and third body portions are disposed along an axisgenerally parallel to a plane of the starting structure.
 15. Thetransistor of claim 13, wherein the starting structure comprises asemiconductor and wherein the semiconductor body comprises silicon,silicon germanium, germanium, or gallium arsenide.
 16. The transistor ofclaim 13, wherein the semiconductor body comprises epitaxial silicon.17. The transistor of claim 13, wherein the gate structure comprises alateral gate length, and wherein the lithography independent width ofthe second body portion is less than the lateral gate length of the gatestructure.
 18. The transistor of claim 17, wherein the gate length isabout 25 nm or less.
 19. The transistor of claim 17, wherein the secondbody portion comprises a depth between the top and the generally planarbottom surface, and wherein the depth of the second body portion and thegate length are generally equal.
 20. The transistor of claim 13, whereinthe second body portion comprises a second bottom surface spaced fromthe starting structure, and wherein the gate structure is disposed alongat least a portion of the second bottom surface between the second bodyportion and the starting structure.
 21. The transistor of claim 20,wherein the gate structure comprises a lateral gate length, and whereinthe lithography independent width of the second body portion is lessthan the lateral gate length of the gate structure.
 22. The transistorof claim 13, wherein the gate structure comprises a lateral gate length,and wherein the lithography independent width of the second body portionis less than one half of the lateral gate length of the gate structure.23. The transistor of claim 22, wherein the lithography independentwidth of the second body portion is about one third of the lateral gatelength of the gate structure.
 24. A transistor, comprising: asemiconductor body comprising first, second, and third body portionsindividually comprising a generally planar first bottom surfaceoverlying a semiconductor starting structure, the first and third bodyportions individually comprising doped source/drains, the second bodyportion comprising a second bottom surface spaced from the startingstructure, first and second sides extending laterally between the firstand third body portions, and a top; and a gate structure disposed alongat least a portion of the top and sides of the second body portion andalong at least a portion of the second bottom surface between the secondbody portion and the starting structure, the gate structure comprising aconductive gate electrode and a gate dielectric disposed between thegate electrode and the second body portion.
 25. The transistor of claim24, wherein the first, second, and third body portions are disposedalong an axis generally parallel to a plane of the starting structure.26. The transistor of claim 24, wherein the semiconductor body comprisessilicon, silicon germanium, germanium, or gallium arsenide.
 27. Thetransistor of claim 24, wherein the gate structure comprises a lateralgate length, and wherein the lithography independent width of the secondbody portion is less than the lateral gate length of the gate structure.28. The transistor of claim 24, wherein the gate structure comprises alateral gate length, and wherein second body portion comprises a widthbetween the first and second less than one half of the lateral gatelength.
 29. The transistor of claim 24, wherein the width of the secondbody portion is about one third of the lateral gate length.